Title :
Reliability of a 90nm Embedded Multi-time Programmable Logic NVM Cells Using Work-function Engineered Tunneling Device
Author :
Wang, Bin ; Ma, Yanjun ; Horch, Andy ; Paulsen, Ron
Author_Institution :
Impinj Inc., Seattle, WA
Abstract :
An embedded multi-time programmable (MTP) nonvolatile memory (NVM) has been developed in a standard 90nm logic process. Using a work function engineered tunneling device and 70A tunneling oxide, excellent endurance (>500k cycles) has been achieved. Reliability of the NVM is evaluated against the traditional tunneling device and a model is proposed to explain the observed reliability differences.
Keywords :
integrated circuit reliability; programmable logic devices; random-access storage; work function; 90 nm; embedded multi-time programmable logic NVM cells; nonvolatile memory; tunneling device; work-function; CMOS logic circuits; Capacitors; Electron traps; Logic devices; Nonvolatile memory; Programmable logic arrays; Programmable logic devices; Reliability engineering; Stress; Tunneling;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.370001
