DocumentCode :
2784987
Title :
Inline phosphoric acid thickness & uniformity measurement system
Author :
Dorn, David A. ; McMuldroch, Stuart
Author_Institution :
Specialized Imaging, Loveland, CO, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Increasingly, manufacturers of silicon solar cells are doping wafers by misting, spraying, or rolling on phosphoric acid. No inline system exists for measuring the mass and uniformity of the deposited film to provide process control feedback in real-time. We show that an optical infrared measurement system can calculate film mass and uniformity inline. Using a parametric optical model, we calculate the expected amount of reflected infrared light as a function of film thickness, acid concentration, incidence angle, and different material optical properties. The model results suggest that the technique is applicable over a wide range of process conditions. Measurements taken of a 20% concentration film for varying film thickness correlate well with the model. We believe this confirms the overall utility of this in-line system for a range of differing process variables.
Keywords :
elemental semiconductors; feedback; process control; solar cells; Si; acid concentration; doping wafer; film mass; incidence angle; inline phosphoric acid; optical infrared measurement system; process control feedback; silicon solar cells; Absorption; Cameras; Current measurement; Optical films; Optical reflection; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5617098
Filename :
5617098
Link To Document :
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