• DocumentCode
    2784987
  • Title

    Inline phosphoric acid thickness & uniformity measurement system

  • Author

    Dorn, David A. ; McMuldroch, Stuart

  • Author_Institution
    Specialized Imaging, Loveland, CO, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Increasingly, manufacturers of silicon solar cells are doping wafers by misting, spraying, or rolling on phosphoric acid. No inline system exists for measuring the mass and uniformity of the deposited film to provide process control feedback in real-time. We show that an optical infrared measurement system can calculate film mass and uniformity inline. Using a parametric optical model, we calculate the expected amount of reflected infrared light as a function of film thickness, acid concentration, incidence angle, and different material optical properties. The model results suggest that the technique is applicable over a wide range of process conditions. Measurements taken of a 20% concentration film for varying film thickness correlate well with the model. We believe this confirms the overall utility of this in-line system for a range of differing process variables.
  • Keywords
    elemental semiconductors; feedback; process control; solar cells; Si; acid concentration; doping wafer; film mass; incidence angle; inline phosphoric acid; optical infrared measurement system; process control feedback; silicon solar cells; Absorption; Cameras; Current measurement; Optical films; Optical reflection; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5617098
  • Filename
    5617098