DocumentCode
2784987
Title
Inline phosphoric acid thickness & uniformity measurement system
Author
Dorn, David A. ; McMuldroch, Stuart
Author_Institution
Specialized Imaging, Loveland, CO, USA
fYear
2010
fDate
20-25 June 2010
Abstract
Increasingly, manufacturers of silicon solar cells are doping wafers by misting, spraying, or rolling on phosphoric acid. No inline system exists for measuring the mass and uniformity of the deposited film to provide process control feedback in real-time. We show that an optical infrared measurement system can calculate film mass and uniformity inline. Using a parametric optical model, we calculate the expected amount of reflected infrared light as a function of film thickness, acid concentration, incidence angle, and different material optical properties. The model results suggest that the technique is applicable over a wide range of process conditions. Measurements taken of a 20% concentration film for varying film thickness correlate well with the model. We believe this confirms the overall utility of this in-line system for a range of differing process variables.
Keywords
elemental semiconductors; feedback; process control; solar cells; Si; acid concentration; doping wafer; film mass; incidence angle; inline phosphoric acid; optical infrared measurement system; process control feedback; silicon solar cells; Absorption; Cameras; Current measurement; Optical films; Optical reflection; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5617098
Filename
5617098
Link To Document