Title :
Degradation Dependent on Channel Width in Sequential Lateral Solidified Poly-Si Thin Film Transistors
Author :
Liang, Hsing-Yi ; Hsieh, Szu-I ; Chen, Hung-Tse ; Lin, Chrong-Jung ; King, Ya-Chin
Author_Institution :
Inst. of Electron. Eng., National Tsing Hua Univ., Hsinchu
Abstract :
Sequential lateral solidification (SLS) technology developed for crystallizing amorphous Si enlarges grain size effectively. However, thin-film transistors made by SLS suffer reliability issues possibly due to the innate sub-grain boundaries parallel to the drain current direction as a result of the solidification process. In this study, we report the first-time observed channel-width- dependent degradation on these devices after hot carrier stress. A model was proposed and verified through the simulated sub-circuit characteristics, which successfully explains the degraded transistor behavior and its width dependence.
Keywords :
grain size; hot carriers; semiconductor device models; semiconductor device reliability; solidification; thin film transistors; Si; channel width dependent degradation; grain boundaries; grain size; hot carrier stress; reliability; sequential lateral solidification; subcircuit characteristics; thin film transistors; Active matrix liquid crystal displays; Crystallization; Degradation; Grain boundaries; Grain size; Hot carriers; Laser sintering; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369568
