Title :
Operation Limits for MOBILE Followers
Author :
Núnez, Juan ; Quintana, José M. ; Avedillo, Maria J.
Author_Institution :
Instituto de Microelectrónica de Sevilla, Centro Nacional de Microelectrónica, Edificio CICA, Avda. Reina Mercedes s/n, 41012-Sevilla, SPAIN, FAX: +34-955056686, E-mail: jnunez@imse.cnm.es
Abstract :
This paper analyses how the presence of the HFET transistor modifies the DC operation of a Resonant Tunneling Logic Follower MOBILE, and can prevent its correct operation. The difficulty of an analytical study for the resulting circuit has been overcome by resorting to series expansions for both the RTD and the HFET I-V characteristics in the points of interest. We have obtained analytical expressions describing the regions where a MOBILE follower operates correctly.
Keywords :
Diodes; Frequency; HEMTs; Latches; Logic circuits; MODFETs; Pipeline processing; RLC circuits; Resonant tunneling devices; Voltage;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247701
