DocumentCode
2785052
Title
Opto-electronic Properties of InGaAs Quantum Ring Infrared Photodetectors
Author
Dai, Jong-Homg ; Lin, Yi-lung ; Lee, Si-Chen ; Jong-Horng Dai ; Yi-Lung Lin ; Si-Chen Lee
Author_Institution
Department of Electrical Engineering & Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, 10617
Volume
2
fYear
2006
fDate
17-20 June 2006
Firstpage
524
Lastpage
526
Abstract
The infrared photodetectors using InGaAs quantum ring (QR) structure are studied. The quantum ring was grown by first depositing InAs quantum dot (QD) on
Keywords
atomic force microscope; photoluminescence; solid-source MBE; Annealing; Atomic force microscopy; Atomic measurements; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Shape measurement; Substrates; Quantum dot infrared photodetector; Quantum ring infrared photodetector; atomic force microscope; photoluminescence; solid-source MBE;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247703
Filename
1717153
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