DocumentCode
2785063
Title
Novel Positive Bias Temperature Instability (PBTI) of N-Channel Mosfets with Plasma Nitrided Oxide
Author
Huard, V. ; Guerin, C. ; Parthasarathy, C.
Author_Institution
NXP Semicond., Crolles
fYear
2007
fDate
15-19 April 2007
Firstpage
686
Lastpage
687
Abstract
This work reports for the first time a new positive bias temperature instability (PBTI) degradation mode in n-channel MOSFETs related to the introduction of plasma nitridation process step. The degradation is explained only by interface traps creation, differently to NBTI on p-channel MOSFETs where hole trapping might be dominant
Keywords
MOSFET; interface states; nitridation; plasma materials processing; semiconductor device reliability; PBTI degradation mode; interface traps; n-channel MOSFETs; plasma nitridation process; positive bias temperature instability; Degradation; Doping; MOSFETs; Niobium compounds; Nitrogen; Plasma temperature; Ring oscillators; Stress; Titanium compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369570
Filename
4227754
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