Title :
History Dependent Recovery of NBTI under Alternating DC and AC Stress
Author :
Kufluoglu, Haldun ; Prasad, Chetan ; Agostinelli, Marty
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
Fast NBTI recovery experiments performed for alternating DC and AC stress modes show that recovery behavior is strongly influenced by degradation history. Proper modeling of PMOS recovery in circuits as well as projections of product lifetime must comprehend the interaction of DC and AC usage states.
Keywords :
MOSFET; semiconductor device models; semiconductor device reliability; NBTI; PMOS recovery; alternating DC-AC stress; history dependent recovery; product lifetime; recovery behavior; Annealing; Degradation; Dispersion; History; Hydrogen; Kinetic theory; MOSFET circuits; Niobium compounds; Stress; Titanium compounds;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369572
