• DocumentCode
    2785130
  • Title

    The Energy-Driven Hot Carrier Degradation Modes

  • Author

    Guerin, C. ; Huard, V. ; Bravaix, A.

  • Author_Institution
    STMicroelectronics, Crolles
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    692
  • Lastpage
    693
  • Abstract
    In this work, we confirm that the energy is the driving force of hot carrier effects. In the high energy-, long channel-case, the LEM picture is still valid. But when the energy is lowered, high energy electrons generated by electron-electron scattering (EES) become the dominant contribution to the degradation. Finally, for even lower energy, the hot carrier degradation becomes a composite mode combining both multiple vibrational excitation (MVE) mechanism (Hess, 1999) and medium-energy electrons heated by EES (Rauch, 2001)
  • Keywords
    MOSFET; electron-electron scattering; hot carriers; semiconductor device reliability; vibrational modes; electron-electron scattering; energy-driven hot carrier degradation modes; high energy electrons; hot carrier effects; medium-energy electrons heating; multiple vibrational excitation mechanism; Bonding; Degradation; Distribution functions; Electrons; Hot carrier effects; Hot carriers; Interface states; Knee; Microelectronics; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369573
  • Filename
    4227757