DocumentCode :
2785165
Title :
CIGS thin films prepared by sputtering and selenization by using In2Se3, Ga2Se3 and Cu as sputtering targets
Author :
Romeo, N. ; Bosio, A. ; Mazzamuto, S. ; Menossi, D. ; Romeo, A.
Author_Institution :
Phys. Dept., Univ. of Parma, Parma, Italy
fYear :
2010
fDate :
20-25 June 2010
Abstract :
CuInGaSe2/CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In2Se3, Ga2Se3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe2 film.
Keywords :
cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor thin films; solar cells; sputter deposition; thin film devices; CIGS thin films; CuInGeSe-CdS; selenization; sputtering; thin film solar cells; Copper; Films; Indium tin oxide; Photovoltaic cells; Sputtering; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5617109
Filename :
5617109
Link To Document :
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