DocumentCode :
2785347
Title :
Gallium phosphide epitaxial films for silicon-based multi-junction solar cells grown by liquid phase epitaxy
Author :
Huang, Susan R. ; Lu, Xuesong ; Barnett, Allen ; Opila, Robert L.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Delaware, Newark, DE, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
The growth of thin layers of III-V semiconductors on a silicon platform for multijunction solar cell applications has the benefits of reduced materials cost and standing on the well-developed silicon integrated circuit and solar cell technology. A prime candidate for developing such a platform is gallium phosphide (GaP) because it has a 0.37% lattice mismatch with Si which is favorable for epitaxial growth. Using liquid phase epitaxy (LPE), we grew GaP films on Si (111) substrates. These GaP/Si structures were characterized for physical properties and further processed into solar cells. In order to investigate the affect of GaP growth on a Si solar cell, we also grew GaP layers on Si solar cells fabricated by a phosphorus diffusion process and compared this structure with a baseline Si solar cell with no GaP layer. The GaP/Si and Si solar cell devices were measured for quantum efficiency and IV characteristics and compared to baseline solar cells without a GaP layer. A GaP layer grown on a Si solar cell deteriorated the current and efficiency. A GaP layer grown on a p-type substrate had lower VOC but currents comparable to that of the baseline Si solar cell.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; liquid phase epitaxial growth; semiconductor thin films; silicon; solar cells; GaP; III-V semiconductors; epitaxial growth; gallium phosphide epitaxial films; integrated circuit; liquid phase epitaxy; phosphorus diffusion process; silicon-based multi-junction solar cells; solar cell technology; thin layers growth; Artificial intelligence; Epitaxial growth; Gallium; Silicon; Gallium Phosphide; Liquid Phase Epitaxy; Multi-junction; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5617118
Filename :
5617118
Link To Document :
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