Ge Nanowire Synthesis for Chip-Specific Application

Nanoelectronic field-effect devices fabricated with 1-D semiconductor nanowires synthesized by bottom-up techniques are likely among those immediate successors of the top-down silicon CMOS technology, preserving the spirit of Moore´s Law. The nanotechnology-embedded chip technology may emerge in the foreseeable future. However, there exists a gap between synthesis research and industrial application. Some of the critical integration issues need to be addressed before nanowire-based chip technology becomes truly impacting. In this paper, efforts are made in directing nanowire synthesis towards realistic implementation in future miniaturized chip. The research work include i) low-temperature and high-yield Ge nanowire synthesis, ii) Ge nanowires-on-insulator (GeNOI), iii) industry-benign metal catalysts, and iv) Ge quantum-wires synthesis.