DocumentCode
2785646
Title
Purification of solar grade silicon using electromagnetic field
Author
Dong, Anping ; Damoah, Lucas N W ; Zhang, Lifeng ; Zhu, Hui
Author_Institution
Dept. of Mater. Sci. & Eng., Missouri Univ. of Sci. & Technol. (Missouri S&T), Rolla, MO, USA
fYear
2010
fDate
20-25 June 2010
Abstract
Non-metallic particles and the metallic impurity elements in the solar cell silicon have a strong detrimental effect on the conversion efficiency of the solar cell. Removing these impurities is one of the important tasks for silicon refining. The current paper proposed a new approach to purify silicon - electromagnetic (EM) separation. Since the non-metallic particles and the metallic impurity elements are non- or less-conductive while the molten silicon is well conductive, under EM field, the Lorenz force will push the particles to the boundary layer, thus separate these inclusions. In the current study, a high frequency EM field was imposed on the silicon melt in laboratory scale experiments with a frequency of 60 kHz and 15.0 A current, the non-conductive SiC particles were successfully pushed to the boundary layer close to the crucible wall.
Keywords
boundary layers; electromagnetic fields; solar cells; Lorenz force; boundary layer; crucible wall; electromagnetic field; metallic impurity elements; nonmetallic particles; solar cell silicon; solar grade silicon; Force; Silicon; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5617131
Filename
5617131
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