• DocumentCode
    2785667
  • Title

    Avalanche development on SF6 contaminated with water vapor

  • Author

    Bouchelou, N. ; Fréchette, M.F. ; Kamel, S. ; Larocque, R.Y.

  • Author_Institution
    Dept. of Eng. Phys., Ecole Polytech. de Montreal, Que., Canada
  • Volume
    2
  • fYear
    1996
  • fDate
    16-19 Jun 1996
  • Firstpage
    806
  • Abstract
    In the present study, the growth of an externally triggered avalanche in SF6 was voluntarily modified using a substantial amount of moisture content. Results show that contamination did not increase the number of initially released photoelectrons but enhanced the avalanche growth rate. The avalanche current amplitude was found to increase with the contamination level, which permitted measurements at higher pressures compared to pure SF6. However, even with 15% water contamination, it was possible to extend the measurement pressure limit only from about 30 to 50 Torr
  • Keywords
    SF6 insulation; electric breakdown; moisture; 30 to 50 torr; SF6; avalanche current amplitude; avalanche development; avalanche growth rate enhancement; higher pressures measurements; moisture content; photoelectrons; water vapor contamination; Books; Cathodes; Couplings; Electrons; Mirrors; Nonlinear equations; Pollution measurement; Production; Sulfur hexafluoride; Water pollution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation, 1996., Conference Record of the 1996 IEEE International Symposium on
  • Conference_Location
    Montreal, Que.
  • ISSN
    1089-084X
  • Print_ISBN
    0-7803-3531-7
  • Type

    conf

  • DOI
    10.1109/ELINSL.1996.549467
  • Filename
    549467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785667