Title :
Avalanche development on SF6 contaminated with water vapor
Author :
Bouchelou, N. ; Fréchette, M.F. ; Kamel, S. ; Larocque, R.Y.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech. de Montreal, Que., Canada
Abstract :
In the present study, the growth of an externally triggered avalanche in SF6 was voluntarily modified using a substantial amount of moisture content. Results show that contamination did not increase the number of initially released photoelectrons but enhanced the avalanche growth rate. The avalanche current amplitude was found to increase with the contamination level, which permitted measurements at higher pressures compared to pure SF6. However, even with 15% water contamination, it was possible to extend the measurement pressure limit only from about 30 to 50 Torr
Keywords :
SF6 insulation; electric breakdown; moisture; 30 to 50 torr; SF6; avalanche current amplitude; avalanche development; avalanche growth rate enhancement; higher pressures measurements; moisture content; photoelectrons; water vapor contamination; Books; Cathodes; Couplings; Electrons; Mirrors; Nonlinear equations; Pollution measurement; Production; Sulfur hexafluoride; Water pollution;
Conference_Titel :
Electrical Insulation, 1996., Conference Record of the 1996 IEEE International Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-3531-7
DOI :
10.1109/ELINSL.1996.549467
