Title :
The effect of strain on auger recomhination and temperature sensitivity in 1.5/spl mu/m quantum well lasers
Author :
Zou, Y. ; Osinski, J.S. ; Grodzinski, P. ; Dapkus, P.D. ; Rideout, W. ; Sharfin, W.F. ; Crawford, F.D.
Author_Institution :
University of Southern California
Abstract :
The reduction of Auger recombination, intervalence band absorption and transparency carrier density in strained 1.5 /spl mu/m lasers has been experimentally verified and the explanation for the still poor temperature sensitivity has been found.
Keywords :
Absorption; Capacitive sensors; Charge carrier density; Density measurement; Laser transitions; Lattices; Quantum well devices; Quantum well lasers; Radiative recombination; Temperature sensors;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763553
