• DocumentCode
    2785801
  • Title

    The effect of strain on auger recomhination and temperature sensitivity in 1.5/spl mu/m quantum well lasers

  • Author

    Zou, Y. ; Osinski, J.S. ; Grodzinski, P. ; Dapkus, P.D. ; Rideout, W. ; Sharfin, W.F. ; Crawford, F.D.

  • Author_Institution
    University of Southern California
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    The reduction of Auger recombination, intervalence band absorption and transparency carrier density in strained 1.5 /spl mu/m lasers has been experimentally verified and the explanation for the still poor temperature sensitivity has been found.
  • Keywords
    Absorption; Capacitive sensors; Charge carrier density; Density measurement; Laser transitions; Lattices; Quantum well devices; Quantum well lasers; Radiative recombination; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763553
  • Filename
    763553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785801