• DocumentCode
    2785802
  • Title

    Growth Mode of Coherent Si1-xGexIslands on Si

  • Author

    Lockwood, D.J. ; Wu, X. ; Baribeau, J.M.

  • Author_Institution
    Institute for Microstructural Sciences National Research Council Ottawa, Ontario KIA 0R6, Canada, david.lockwood@nrc.ca
  • Volume
    2
  • fYear
    2006
  • fDate
    17-20 June 2006
  • Firstpage
    655
  • Lastpage
    658
  • Abstract
    Coherent Si1-xGexisland growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations x in the range 0.37-0.56. A combined transmission electron microscope, x-ray diffraction, and Raman spectroscopy characterization of the samples showed that during growth the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher.
  • Keywords
    Ge; Si; alloy; coherent growth; dots; islands; strain; Capacitive sensors; Epitaxial growth; Germanium alloys; Molecular beam epitaxial growth; Raman scattering; Spectroscopy; Superlattices; Temperature; Transmission electron microscopy; X-ray diffraction; Ge; Si; alloy; coherent growth; dots; islands; strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
  • Print_ISBN
    1-4244-0077-5
  • Type

    conf

  • DOI
    10.1109/NANO.2006.247739
  • Filename
    1717189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785802