Title :
Growth Mode of Coherent Si1-xGexIslands on Si
Author :
Lockwood, D.J. ; Wu, X. ; Baribeau, J.M.
Author_Institution :
Institute for Microstructural Sciences National Research Council Ottawa, Ontario KIA 0R6, Canada, david.lockwood@nrc.ca
Abstract :
Coherent Si1-xGexisland growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations x in the range 0.37-0.56. A combined transmission electron microscope, x-ray diffraction, and Raman spectroscopy characterization of the samples showed that during growth the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher.
Keywords :
Ge; Si; alloy; coherent growth; dots; islands; strain; Capacitive sensors; Epitaxial growth; Germanium alloys; Molecular beam epitaxial growth; Raman scattering; Spectroscopy; Superlattices; Temperature; Transmission electron microscopy; X-ray diffraction; Ge; Si; alloy; coherent growth; dots; islands; strain;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247739
