Title :
Improved performance in tensile-strained long wavelength lasers
Author :
Jones, G. ; Silver, M. ; Hawley, M. ; O´Reilly, E.P. ; Adams, A.R. ; Thijs, P.J.A.
Author_Institution :
University of Surrey
Abstract :
A tensile-strained active region enhances TM gain, reducing radiative currents in semiconductor lasers. Auger recombination is reduced but not intervalence band absorption. Tensile InGaAs/InGaAsP approaches a Type II band line-up, increasing barrier-related losses.
Keywords :
Charge carrier density; Electrons; Laser theory; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature; Tensile strain; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763557
