• DocumentCode
    2785877
  • Title

    Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers

  • Author

    Kano, F. ; Yamanaka, T. ; Yamamoto, N. ; Yoshikuni, Y. ; Mawatari, H. ; Tohmori, Y. ; Yamamoto, M. ; Yokoyama, K.

  • Author_Institution
    NTT Opto-electronics Laboratories
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    32
  • Lastpage
    33
  • Abstract
    Reduction of the linewidth enhancement factor cc is demonstrated in 1.3 /spl mu/m InGaAsP/InP modulation-doped strained multiple-quantum-well lasers. A small /spl alpha/ value of less than I is obtained with positive gain.
  • Keywords
    Chirp; Doping; Epitaxial layers; Frequency estimation; Indium phosphide; Laboratories; Laser theory; Quantum well devices; Semiconductor lasers; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763558
  • Filename
    763558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785877