• DocumentCode
    2785927
  • Title

    Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)

  • Author

    Seki, Satoshi ; Sotirelis, P. ; Hess, K.

  • Author_Institution
    University of Illinois at Urbana-Champaign
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    42
  • Lastpage
    43
  • Abstract
    The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.
  • Keywords
    Bandwidth; Capacitive sensors; Effective mass; Indium gallium arsenide; Laboratories; Laser theory; Optical fiber communication; Quantum mechanics; Quantum well lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763562
  • Filename
    763562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785927