DocumentCode :
2785983
Title :
Improvement of high power/high temperature operation of long wavelength laser diodes by band discontinuity reduction layer
Author :
Takemoto, A. ; Matsurnoto, K. ; Nishiguchi, H. ; Takiguchi, T. ; Nakajima, Y. ; Omura, E. ; Aiga, M.
Author_Institution :
Mitsubishi Electric Corporation
fYear :
1992
fDate :
21-25 Sept. 1992
Firstpage :
48
Lastpage :
49
Abstract :
50 percent increase of maximum output power and 25 percent decrease of operating current at 70/spl deg/C,5mW in long wavelength laser diodes have been realized by the introduction of intermediate composite layer between a cladding layer and an active layer.
Keywords :
Chemical vapor deposition; Controllability; Diode lasers; Epitaxial growth; Laboratories; Microwave devices; Microwave theory and techniques; Optical device fabrication; Power generation; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
Type :
conf
DOI :
10.1109/ISLC.1992.763565
Filename :
763565
Link To Document :
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