• DocumentCode
    2786017
  • Title

    Low stress and low dislocation density AlGaAs/GaAs laser diodes fabricated on Si substrates

  • Author

    Wada, N. ; Yosfumi, S. ; Sakai, S. ; Fukui, M.

  • Author_Institution
    Tokushima University
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    54
  • Lastpage
    55
  • Abstract
    AlGaAs/GaAs double-hetero-structure laser diodes utilizing the UCGAS (undercut GaAs on Si) which had very low dark spot density and the thermal stress have been fabricated. The diodes lased successfully under pulsed condition at room temperature.
  • Keywords
    Annealing; DH-HEMTs; Diode lasers; Gallium arsenide; Laser sintering; Light emitting diodes; MOCVD; Photoluminescence; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763568
  • Filename
    763568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2786017