Title :
Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy
Author :
Zhang, G. ; Outchinnikov, A. ; Nappi, J. ; Asonen, H. ; Pessa, M.
Author_Institution :
Tampere University of Technology
Abstract :
Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.
Keywords :
Gallium arsenide; Gas lasers; Indium gallium arsenide; Laser theory; Molecular beam epitaxial growth; Physics; Quantum well lasers; Radiative recombination; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763569
