Influence of negative corona-charged surface protective material on surface depletion region width

Author

Feng, Zhang ; Chuanxiang, Xu ; Shaoyun, Zhang

Author_Institution

Dept. of Electr. Eng., Xi´´an Jiaotong Univ., China

Volume

2

fYear

1996

fDate

16-19 Jun 1996

Firstpage

862

Abstract

The change of the surface depletion region width (SDRW) of a pn junction for high voltage silicon rectifiers caused by a negative corona-charged surface protective material has been studied. Negative corona charge makes the surface charge density of a SiO₂-insulator interface negative and thus, cause the SDRW to expand. The photocurrent method is used to measure the SDRW of reverse-biased pn function with positive bevel angle mesa structure. The change to SDRW can be caused by the decay of the surface charge density. The expanse of the SDRW tends to saturate as the voltage of the corona is increased. The decay process is different with different surface protection materials. Numerical calculation were performed and the surface charge density of negative corona-charged insulators was found to be approximately -10¹¹ charges/cm²

Keywords

corona; elemental semiconductors; organic insulating materials; p-n junctions; photoconductivity; polymers; rectifying circuits; silicon; SiO₂; SiO₂-insulator interface; high voltage silicon rectifiers; negative corona-charged surface protective material; photocurrent method; pn junction; polymer insulation; positive bevel angle mesa structure; surface charge density decay; surface depletion region width; Corona; Dielectrics and electrical insulation; Equations; P-n junctions; Photoconductivity; Protection; Rectifiers; Silicon; Surface discharges; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation, 1996., Conference Record of the 1996 IEEE International Symposium on

Conference_Location

Montreal, Que.

ISSN

1089-084X

Print_ISBN

0-7803-3531-7

Type

conf

DOI

10.1109/ELINSL.1996.549478

Filename

549478