• DocumentCode
    2786263
  • Title

    High-power AlGaInP visible laser diodes with a non-absorbing window-structure

  • Author

    Kamizato, T. ; Arimoto, S. ; Watanabe, H. ; Kadoiwa, K. ; Omura, E. ; Kakimoto, S. ; Ikeda, K.

  • Author_Institution
    Mitsubishi Electric Corporation
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    A non-absorbing window-structure formed by solid phase diffusion has been employed to AlGaInP visible laser diodes with a multi-quantum barrier(MQB) and a strained active layer for the first time. Maximum output power density over 18MW/cm /sup 2/ without optical damage and stable operation under 40-50mW CW conditions are demonstrated.
  • Keywords
    Aging; Diode lasers; Electrons; Laboratories; Microwave devices; Optical pulses; Power generation; Solids; Testing; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763588
  • Filename
    763588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2786263