• DocumentCode
    2786648
  • Title

    Investigate of PIN Microrystalline Silicon Solar Cell Based on One-Dimensional Model

  • Author

    Zhu, Jun ; Ding, Jianning ; Wang, Shubo ; Guo, Liqiang

  • Author_Institution
    Center for Micro/Nano Sci. & Technol., Jiangsu Univ., Zhenjiang, China
  • Volume
    4
  • fYear
    2011
  • fDate
    24-25 Sept. 2011
  • Firstpage
    316
  • Lastpage
    318
  • Abstract
    One-dimensional model is built for microcrystalline silicon and based on this model AMPS software is used to investigate the influence of different crystalline volume fraction of microcrystalline silicon as the intrinsic layer on the properties of PIN solar cell . The calculations indicate that the crystalline volume fraction of 30-50% is suitable for the μc-Si film as an intrinsic layer of the PIN solar cells. The result is: With the crystalline ratio increases, the battery open circuit voltage decreases; short-circuit current first increases and then decreases in the ratio of crystalline to get maximum value when about 50%; conversion efficiency ratio in the crystalline state get 30% -40% at maximum; fill factor increases. By the quantum efficiency curve analysis to know the best there is a microcrystalline silicon solar cells to optimize the ratio of the crystalline state. In summary, 30% -50% of microcrystalline silicon crystalline more appropriate than a PIN microcrystalline silicon solar cells in the intrinsic layer.
  • Keywords
    elemental semiconductors; power engineering computing; silicon; solar cells; AMPS software; PIN microrystalline silicon solar cell; Si; crystalline volume fraction; microcrystalline silicon solar cells; one-dimensional model; open circuit voltage; short-circuit current; Films; Kelvin; Nanoscale devices; Photovoltaic cells; Physics; Silicon; microcrystalline silicon; rystalline volume fraction(Xc); solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Technology, Computer Engineering and Management Sciences (ICM), 2011 International Conference on
  • Conference_Location
    Nanjing, Jiangsu
  • Print_ISBN
    978-1-4577-1419-1
  • Type

    conf

  • DOI
    10.1109/ICM.2011.399
  • Filename
    6113757