DocumentCode
2786648
Title
Investigate of PIN Microrystalline Silicon Solar Cell Based on One-Dimensional Model
Author
Zhu, Jun ; Ding, Jianning ; Wang, Shubo ; Guo, Liqiang
Author_Institution
Center for Micro/Nano Sci. & Technol., Jiangsu Univ., Zhenjiang, China
Volume
4
fYear
2011
fDate
24-25 Sept. 2011
Firstpage
316
Lastpage
318
Abstract
One-dimensional model is built for microcrystalline silicon and based on this model AMPS software is used to investigate the influence of different crystalline volume fraction of microcrystalline silicon as the intrinsic layer on the properties of PIN solar cell . The calculations indicate that the crystalline volume fraction of 30-50% is suitable for the μc-Si film as an intrinsic layer of the PIN solar cells. The result is: With the crystalline ratio increases, the battery open circuit voltage decreases; short-circuit current first increases and then decreases in the ratio of crystalline to get maximum value when about 50%; conversion efficiency ratio in the crystalline state get 30% -40% at maximum; fill factor increases. By the quantum efficiency curve analysis to know the best there is a microcrystalline silicon solar cells to optimize the ratio of the crystalline state. In summary, 30% -50% of microcrystalline silicon crystalline more appropriate than a PIN microcrystalline silicon solar cells in the intrinsic layer.
Keywords
elemental semiconductors; power engineering computing; silicon; solar cells; AMPS software; PIN microrystalline silicon solar cell; Si; crystalline volume fraction; microcrystalline silicon solar cells; one-dimensional model; open circuit voltage; short-circuit current; Films; Kelvin; Nanoscale devices; Photovoltaic cells; Physics; Silicon; microcrystalline silicon; rystalline volume fraction(Xc); solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Technology, Computer Engineering and Management Sciences (ICM), 2011 International Conference on
Conference_Location
Nanjing, Jiangsu
Print_ISBN
978-1-4577-1419-1
Type
conf
DOI
10.1109/ICM.2011.399
Filename
6113757
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