• DocumentCode
    2786681
  • Title

    Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm

  • Author

    Valster, A. ; van der Poel, C.J. ; Finke, M.N. ; Boermans, M.J.B.

  • Author_Institution
    Philips Optoelectronics Centre
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    152
  • Lastpage
    153
  • Abstract
    For the first time the performance of visible lasers operating at 633 nm is reported as function of the amount of applied strain. Varying the strain between /spl delta/a/a = -1 % and /spl delta/a/a = + 1 % two minima in threshold current density have been found and are explained.
  • Keywords
    Capacitive sensors; DH-HEMTs; Diode lasers; Electrons; Light sources; Quantum well lasers; Surface emitting lasers; Temperature measurement; Tensile strain; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763615
  • Filename
    763615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2786681