DocumentCode
2786698
Title
630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substrates
Author
Hiroyama, R. ; Hamada, H. ; Shono, M. ; Honda, S. ; Yodoshi, K. ; Yamaguchi, T.
Author_Institution
SANYO Electric Corporation
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
154
Lastpage
155
Abstract
We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.
Keywords
Artificial intelligence; Diode lasers; Electrons; Gallium arsenide; Gas lasers; MOCVD; Quantum well devices; Substrates; Temperature dependence; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763616
Filename
763616
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