Title :
High temperature (74/spl deg/c) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier
Author :
Rennie, J. ; Okajima, M. ; Watanabe, M. ; Hatakoshi, G.
Author_Institution :
Toshiba Corporation
Abstract :
A 634nm InGaAlP laser, incorporating a multiple quantum barrier (MQB), has been developed exhibiting a high, 74"C, maximum operating temperature and a law threshold current 49mA. The presence of the MQB inducing these superior characteristics.
Keywords :
Diode lasers; Electrons; Gas lasers; Optical recording; Quantum well devices; Quantum well lasers; Research and development; Semiconductor lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763618
