DocumentCode
2786816
Title
Analysis on fm efficiency of InGaAs/InGaAsP SCH-MQW LDs Taking Injection Carrier Transport into Account
Author
Yamazaki, H. ; Yamaguchi, M. ; Kitamura, M. ; Mito, I.
Author_Institution
NEC Corporation
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
174
Lastpage
175
Abstract
Injection carrier transport from SCH layers to wells in SCH-MQW LDs was found to play an important role for FM response. Both of the measured and the calculated results indicate that wide SCH layer is desirable for high FM efficiency operation.
Keywords
Charge carrier density; Frequency modulation; Frequency shift keying; Indium gallium arsenide; Laboratories; Nonlinear equations; Nonlinear optics; Optical losses; Quantum well devices; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763625
Filename
763625
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