DocumentCode
2786833
Title
Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots
Author
Dialynas, G.E. ; Xenogianni, C. ; Trichas, E. ; Savvidis, P.G. ; Constantinidis, G. ; Hatzopoulos, Z. ; Pelekanos, N.T.
Author_Institution
Microelectronics Research Group, IESL/FORTH, P.O. Box 1527, 71110 Heraklion, Greece
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.
Keywords
Apertures; Atom optics; Atomic force microscopy; Chromium; Excitons; Gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Scanning electron microscopy; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location
Baltimore, MD, USA
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/QELS.2007.4431291
Filename
4431291
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