DocumentCode :
2786906
Title :
Multicrystalline solar grade silicon solar cells
Author :
Peter, K. ; Kopecek, R. ; Wilson, M. ; Lagowski, J. ; Enebakk, E. ; Soiland, A. ; Grandum, S.
Author_Institution :
Int. Solar Energy Res. Center Konstanz, Konstanz, Germany
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Multicrystalline solar grade silicon solar cells from metallurgical process route and small Cz-Si test ingots have been investigated to further understand the impact of compensation and related reduced majority carrier mobilities. A possible PB complex which may prevent BO2i complex formation has been discussed recently by different research groups in several contributions. Our low temperature PL measurements strongly support the existence of such a boron/phosphorous complex. The industrially applicable multicrystalline crystallisation process at Elkem Solar as well as the solar cell process at ISC Konstanz were consequently further developed to improve the cell efficiency towards 17%.
Keywords :
crystallisation; elemental semiconductors; solar cells; Elkem Solar; Si; carrier mobility; metallurgical process; multicrystalline crystallisation process; multicrystalline solar grade silicon solar cell; solar cell process; test ingots; Boron; Conductivity; Degradation; Photovoltaic cells; Silicon; Temperature measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5617206
Filename :
5617206
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2786906
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