Title :
Low threshold 1.3/spl mu/m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
Author :
Kasukawa, A. ; Imajo, Y. ; Namegaya, T. ; Hiratani, Y. ; Kikuta, T.
Author_Institution :
Opto-electronics Technology Research Co., Ltd.
Abstract :
A very low threshold current density of 450A/cm/sup 2/ was obtained in a novel 1.3/spl mu/m InAsP/InP strained layer quantum well laser diode (LD) for the first time. Threshold current as low as 5.5mA was obtained in a buried heterostructure LD.
Keywords :
Capacitive sensors; Chemical technology; Chemical vapor deposition; Diode lasers; Electrons; Indium phosphide; Power generation; Research and development; Temperature distribution; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763636
