Title :
Low threshold 1.3 /spl mu/m strained-layer Al/sub x/Ga/sub y/ln/sub 1-x-y/As Quantum Well Lasers
Author :
Zah, C.E. ; Bhat, Ritesh ; Favire, P.J. ; Koza, M. ; Lee, T.P.
Author_Institution :
Bellcore
Abstract :
We demonstrate low threshold 1.3-/spl mu/m lasers using compressive- as well as tensile-strained single Al/sub x/Ga/sub y/ln/sub 1-x-y/As quantum well (100 A/cm2 and 188 A/CM/sup 2/ respectively). Low threshold currents of 2 mA at 25 /spl deg/C and 14 mA at 100 /spl deg/C are achieved for the ridge waveguide lasers.
Keywords :
Capacitive sensors; Chemical lasers; Fiber lasers; Indium gallium arsenide; Laser theory; Optical materials; Photonic band gap; Quantum well lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763637
