• DocumentCode
    2787014
  • Title

    1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides

  • Author

    Shin Ishikawa ; Fukagai, K. ; Miyazaki, T. ; Fujii, H. ; Kenji Endo

  • Author_Institution
    NEC Corporation
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    204
  • Lastpage
    205
  • Abstract
    High-power 1.02-/spl mu/m strained InGaAsIAIGaAs double quantum-well lasers with GaInP buried waveguides have been developedfor Pr/sup 3+/-doped fiber amplifier pumping. 415-mW maximurn cw light output power and stable 100-mW operation have been achieved.
  • Keywords
    Indium gallium arsenide; Laser stability; Optical fiber communication; Optical fiber devices; Optical waveguides; Power amplifiers; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763638
  • Filename
    763638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2787014