Title :
1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides
Author :
Shin Ishikawa ; Fukagai, K. ; Miyazaki, T. ; Fujii, H. ; Kenji Endo
Author_Institution :
NEC Corporation
Abstract :
High-power 1.02-/spl mu/m strained InGaAsIAIGaAs double quantum-well lasers with GaInP buried waveguides have been developedfor Pr/sup 3+/-doped fiber amplifier pumping. 415-mW maximurn cw light output power and stable 100-mW operation have been achieved.
Keywords :
Indium gallium arsenide; Laser stability; Optical fiber communication; Optical fiber devices; Optical waveguides; Power amplifiers; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763638
