Title :
CBE grown 1.5 /spl mu/m GaInAsP/InP Surface Emitting Lasers
Author :
Uchida, T. ; Miyamoto, T. ; Yokouchi, N. ; Inaba, Y. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Institute of Technology
Abstract :
Two structures of GaInAsP/InP surface emitting laser structures have been demonstrated grown by chemical beam epitaxy (CBE). The threshold current as low as 2.6mA was obtained under 77K cw operation (the lowest cw threshold at 77K). Near room temperature pulsed operation is also achieved using a composite GaInAsP/InP grown mirror.
Keywords :
Chemical lasers; Distributed Bragg reflectors; Indium phosphide; Mirrors; Nonhomogeneous media; Optical surface waves; Reflectivity; Surface emitting lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763641
