Title :
High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes
Author :
Garbuzov, D.Z. ; Antonishkis, N.Y. ; Il´inskaya, N.D. ; Zhigulin, S.N. ; Katsavets, N.I. ; Kochergin, A.V. ; Pyataev, V.Z. ; Fuksman, M.V.
Author_Institution :
A.F.Ioffe Physico-Technical Institute
Abstract :
Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.
Keywords :
Diode lasers; Gallium arsenide; Mirrors; Optimized production technology; P-n junctions; Power generation; Semiconductor diodes; Solids; Temperature; Thermal resistance;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763647
