• DocumentCode
    2787165
  • Title

    High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes

  • Author

    Garbuzov, D.Z. ; Antonishkis, N.Y. ; Il´inskaya, N.D. ; Zhigulin, S.N. ; Katsavets, N.I. ; Kochergin, A.V. ; Pyataev, V.Z. ; Fuksman, M.V.

  • Author_Institution
    A.F.Ioffe Physico-Technical Institute
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    224
  • Lastpage
    225
  • Abstract
    Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.
  • Keywords
    Diode lasers; Gallium arsenide; Mirrors; Optimized production technology; P-n junctions; Power generation; Semiconductor diodes; Solids; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763647
  • Filename
    763647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2787165