Title :
1.55/spl mu/m multi-quantum-well lasers with record performance obtained by atmospheric pressure MOVPE using an organometallic phosphorous precursor bis(phosphinoethane)
Author :
Ougazzaden, A. ; Mircea, A. ; Mellet, R. ; Primot, G. ; Kazmierski, C.
Author_Institution :
Centre National d´´Etudes des Telecommunications
Abstract :
The recently available precursor bisphosphinoethane (BPE) was used, alongside with phosphine and with tertbutylphosphine (TBP), to grow advanced multi-quantum-well (MQW) laser wafers with five quaternary, compressive strained wells. The lowest threshold current densities and the lowest optical losses were obtained with BPE. In particular, the lowest threshold current density - 328 A/cm/spl 2/ - is a record among published values for lasers with 5 wells. In this comparison, the wafer grown with phosphine came a close second and the one with TBP was third.
Keywords :
Epitaxial growth; Epitaxial layers; Facsimile; Indium phosphide; Optical losses; Photoluminescence; Quantum well devices; Semiconductor lasers; Strain measurement; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763648
