Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well

Author

Nagai, Y. ; Shigihara, K. ; Takami, A. ; Karakida, S. ; Aiga, M.

Author_Institution

In partially intermixed quantum well laser diode whose shift of bandgap energy is 47.8meV, the threshold current increses only 30% from non-intermixed one and good reliability is confirmed by aging test of 2000 hours at the temperature of 45/spl deg/C.

fYear

1992

fDate

21-25 Sept. 1992

Firstpage

232

Lastpage

233

Abstract

In partially intermixed quantum well laser diode whose shift of bandgap energy is 47.8meV, the threshold current increses only 30% from non-intermixed one and good reliability is confirmed by aging test of 2000 hours at the temperature of 45??C.

Keywords

Aging; Cities and towns; Diode lasers; Gallium arsenide; Microwave devices; Photonic band gap; Temperature; Testing; Threshold current; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International

Conference_Location

Kagazwa, Japan

Print_ISBN

4-930813-51-4

Type

conf

DOI

10.1109/ISLC.1992.763650

Filename

763650