Title :
Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well
Author :
Nagai, Y. ; Shigihara, K. ; Takami, A. ; Karakida, S. ; Aiga, M.
Author_Institution :
In partially intermixed quantum well laser diode whose shift of bandgap energy is 47.8meV, the threshold current increses only 30% from non-intermixed one and good reliability is confirmed by aging test of 2000 hours at the temperature of 45/spl deg/C.
Abstract :
In partially intermixed quantum well laser diode whose shift of bandgap energy is 47.8meV, the threshold current increses only 30% from non-intermixed one and good reliability is confirmed by aging test of 2000 hours at the temperature of 45??C.
Keywords :
Aging; Cities and towns; Diode lasers; Gallium arsenide; Microwave devices; Photonic band gap; Temperature; Testing; Threshold current; Zinc;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763650
