DocumentCode
2787203
Title
Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region
Author
Miyake, Y. ; Hirayama, H. ; Tamura, S. ; Yoshida, J. ; Arai, S. ; Suematsu, Y.
Author_Institution
Tokyo Institute of Technology
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
234
Lastpage
235
Abstract
A room temperature CW operation of a GaInAs/GaInAsP/InP SCH quantum-wire laser with 5nm thick and 10-30nm wide vertically stacked triple-wire active region was achieved by using 2-step LP-OMVPE growth on p-type InP substrate, to increase the hole injection efficiency, and direct writing by an electron beam exposure followed by wet chemical etching.
Keywords
Chemical lasers; Electron beams; Indium phosphide; Laser beam cutting; Laser theory; Optical films; Substrates; Temperature; Threshold current; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763651
Filename
763651
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