Title :
Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region
Author :
Miyake, Y. ; Hirayama, H. ; Tamura, S. ; Yoshida, J. ; Arai, S. ; Suematsu, Y.
Author_Institution :
Tokyo Institute of Technology
Abstract :
A room temperature CW operation of a GaInAs/GaInAsP/InP SCH quantum-wire laser with 5nm thick and 10-30nm wide vertically stacked triple-wire active region was achieved by using 2-step LP-OMVPE growth on p-type InP substrate, to increase the hole injection efficiency, and direct writing by an electron beam exposure followed by wet chemical etching.
Keywords :
Chemical lasers; Electron beams; Indium phosphide; Laser beam cutting; Laser theory; Optical films; Substrates; Temperature; Threshold current; Wet etching;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763651
