DocumentCode
2787315
Title
Ground rule slack aware tolerance-driven optical proximity correction for local metal interconnects
Author
Banerjee, Shayak ; Agarwal, Kanak ; Orshansky, Michael
Author_Institution
University of Texas - Austin, USA
fYear
2010
fDate
19-22 Sept. 2010
Firstpage
1
Lastpage
4
Abstract
The current method of communicating process capabilities to the designer is in the form of ground rules. However, due to constraints on the complexity and number of rules, there may exist shapes that are design-rule clean but difficult to manufacture. This problem is exacerbated in local routes drawn on 1x metal (M1) which allows highly bi-directional shapes at tight spacing. On the other hand, local M1 routes have low parasitic resistance and capacitance as compared to device impedances. Hence there exists an opportunity to perturb these shapes to improve their manufacturability without significant performance impact. We propose to guide this perturbation by the amount of leeway available between the designed values and the ground rules - which we refer to as ground rule slack. In this paper, we utilize ground rule slack to generate tolerance bands for layout features. We further develop a tolerance-driven optical proximity correction (TD-OPC) algorithm which utilizes such tolerance bands to find a lithographically optimal mask solution for manufacturing. Our experiments on sample layouts shows that the use of this methodology helps reduce lithographic hotspots by 59% in comparison to process window optical proximity correction.
Keywords
design for manufacture; optical interconnections; proximity effect (lithography); bi-directional shapes; capacitance; ground rule slack aware tolerance-driven optical proximity correction; local metal interconnects; parasitic resistance; process window optical proximity correction; tight spacing; Adaptive optics; Algorithm design and analysis; Layout; Lithography; Metals; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location
San Jose, CA
ISSN
0886-5930
Print_ISBN
978-1-4244-5758-8
Type
conf
DOI
10.1109/CICC.2010.5617379
Filename
5617379
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