Title :
Emission Intensity Improvement of InGaN Ultraviolet Light-Emitting Diodes Grown on Wet-Etched Sapphire Substrates
Author :
Pan, Chang-Chi ; Hsieh, Chi-Hsun ; Chyi, Jen-Inn
Author_Institution :
Optical Sciences Center and Department of Electrical Engineering, National Central University, Jhongli, Taiwan 32001, China
Keywords :
Dry etching; Epitaxial growth; Gallium nitride; Light emitting diodes; Optical pumping; Optical sensors; Power generation; Stimulated emission; Substrates; Wet etching;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431326
