Title :
Carrier Concentration and Junction Temperature Dependencies of Illumination Efficiency of GaN Power Light-Emitting Diodes
Author :
Liao, Michael P.
Author_Institution :
Department of Electrical Engineering, DaYeh University, Chang-Hua, 515, Taiwan
Abstract :
Pulsed drive currents have helped us separate the effects that junction temperature and carrier concentration have on current-induced efficiency degradation of GaN Power LEDs. Carrier concentration and junction temperature dependencies of illumination efficiency are presented.
Keywords :
Degradation; Gallium nitride; Light emitting diodes; Lighting; Optical pulses; Optical sensors; Power generation; Temperature dependence; Temperature sensors; Voltage;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431328
