• DocumentCode
    2787368
  • Title

    Carrier Concentration and Junction Temperature Dependencies of Illumination Efficiency of GaN Power Light-Emitting Diodes

  • Author

    Liao, Michael P.

  • Author_Institution
    Department of Electrical Engineering, DaYeh University, Chang-Hua, 515, Taiwan
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Pulsed drive currents have helped us separate the effects that junction temperature and carrier concentration have on current-induced efficiency degradation of GaN Power LEDs. Carrier concentration and junction temperature dependencies of illumination efficiency are presented.
  • Keywords
    Degradation; Gallium nitride; Light emitting diodes; Lighting; Optical pulses; Optical sensors; Power generation; Temperature dependence; Temperature sensors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431328
  • Filename
    4431328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2787368