DocumentCode
2787403
Title
Efficient point defect engineered si light-emitting diode at 1.218 μm
Author
Bao, Jiming ; Tabbal, Malek ; Kim, Taegon ; Charnvanichborikarn, Supakit ; Williams, James S. ; Aziz, Michael J. ; Capasso, Federico
Author_Institution
Division of Engineering and Applied Sciences, Harvard University Cambridge, MA, 02138, USA
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We have demonstrated a Si LED with an internal quantum efficiency ˜ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.
Keywords
Electroluminescent devices; Light emitting diodes; Luminescence; Optical pulses; Particle beam optics; Physics; Radiative recombination; Space vector pulse width modulation; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location
Baltimore, MD, USA
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/QELS.2007.4431330
Filename
4431330
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