Title :
Efficient point defect engineered si light-emitting diode at 1.218 μm
Author :
Bao, Jiming ; Tabbal, Malek ; Kim, Taegon ; Charnvanichborikarn, Supakit ; Williams, James S. ; Aziz, Michael J. ; Capasso, Federico
Author_Institution :
Division of Engineering and Applied Sciences, Harvard University Cambridge, MA, 02138, USA
Abstract :
We have demonstrated a Si LED with an internal quantum efficiency ˜ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.
Keywords :
Electroluminescent devices; Light emitting diodes; Luminescence; Optical pulses; Particle beam optics; Physics; Radiative recombination; Space vector pulse width modulation; Stimulated emission; Temperature;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431330
