A 77 GHz power amplifier using transformer-based power combiner in 90 nm CMOS

Author

Chang, Tao-Yao ; Wang, Chao-Shiun ; Wang, Chorng-Kuang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

19-22 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

A 77 GHz fully-integrated power amplifier (PA) with 50 Ω input and output matching has been realized in a general purpose 90 nm CMOS technology. In order to improve the output power and reduce the signal loss, a transformer and a short stub topology are employed respectively. The power amplifier achieves a saturated output power (P_out,sat) of +13.2 dBm and 1dB compressed output power (P_out,1dB) of +11.2 dBm with a peak power-added efficiency (PAE) of 10.4% while operated with a 1.2 V supply.

Keywords

CMOS analogue integrated circuits; millimetre wave power amplifiers; power combiners; CMOS; frequency 77 GHz; fully-integrated power amplifier; resistance 50 ohm; short stub topology; size 90 nm; transformer-based power combiner; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Circuit faults; Impedance matching; Power amplifiers; Power generation; Radar; 77 GHz; CMOS millimeter-wave integrated circuits; CMOS power amplifiers; automotive radar; power combiners; transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2010 IEEE

Conference_Location

San Jose, CA

ISSN

0886-5930

Print_ISBN

978-1-4244-5758-8

Type

conf

DOI

10.1109/CICC.2010.5617399

Filename

5617399