DocumentCode :
2787663
Title :
A 77 GHz power amplifier using transformer-based power combiner in 90 nm CMOS
Author :
Chang, Tao-Yao ; Wang, Chao-Shiun ; Wang, Chorng-Kuang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2010
fDate :
19-22 Sept. 2010
Firstpage :
1
Lastpage :
4
Abstract :
A 77 GHz fully-integrated power amplifier (PA) with 50 Ω input and output matching has been realized in a general purpose 90 nm CMOS technology. In order to improve the output power and reduce the signal loss, a transformer and a short stub topology are employed respectively. The power amplifier achieves a saturated output power (Pout,sat) of +13.2 dBm and 1dB compressed output power (Pout,1dB) of +11.2 dBm with a peak power-added efficiency (PAE) of 10.4% while operated with a 1.2 V supply.
Keywords :
CMOS analogue integrated circuits; millimetre wave power amplifiers; power combiners; CMOS; frequency 77 GHz; fully-integrated power amplifier; resistance 50 ohm; short stub topology; size 90 nm; transformer-based power combiner; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Circuit faults; Impedance matching; Power amplifiers; Power generation; Radar; 77 GHz; CMOS millimeter-wave integrated circuits; CMOS power amplifiers; automotive radar; power combiners; transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location :
San Jose, CA
ISSN :
0886-5930
Print_ISBN :
978-1-4244-5758-8
Type :
conf
DOI :
10.1109/CICC.2010.5617399
Filename :
5617399
Link To Document :
بازگشت