Title :
Modelling the epitaxial growth process of gallium arsenide
Author :
Macpherson, A.K. ; Behboudi, D. ; Hwang, J.C.M. ; Micek, G.
Author_Institution :
Packard Lab., Lehigh Univ., Bethlehem, PA, USA
Abstract :
A molecular dynamic model of epitaxial growth on gallium arsenide is presented. The results from the molecular dynamics model are used to obtain parametric growth data including layer thickness and doping concentration. Initially, it was necessary to check the potential, which was developed for bulk gallium arsenide, for its applicability to surface growth. The resultant continuum model, when integrated with Stanford University´s SUPREM 3.5 code, can simulate gallium arsenide processing based on epitaxial material
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; modelling; semiconductor epitaxial layers; semiconductor growth; simulation; GaAs surface growth; SUPREM 3.5 code; continuum model; doping concentration; epitaxial growth process; layer thickness; molecular dynamic model; parametric growth data; semiconductors; Atomic layer deposition; Epitaxial growth; Gallium arsenide; Kelvin; Packaging; Random number generation; Semiconductor process modeling; Solid modeling; Taylor series; Temperature;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1990 Proceedings, Competitive Manufacturing for the Next Decade. IEMT Symposium, Ninth IEEE/CHMT International
Conference_Location :
Washington, DC
DOI :
10.1109/IEMT9.1990.114981
