Theory of electron dynamics in light emitting quantum dot devices

Quantum dot based light emitters can be used as laser and single photon devices. In particular, we focus on the theory of InAs/GaAs quantum dots (QDs) embedded in a two dimensional wetting layer (WL). For simulating real devices, the interactions between electrons and holes confined in the QDs and the wetting layer are important. Therefore, we include Coulomb interaction as well as electron-phonon coupling, considering multi-phonon processes based on an effective multiphonon Hamilton operator. Here, we focus on non-equilibrium distributions, which are formed both in the WL and the QDs during the injection of carriers. Finally the model is extended by inclusion of Maxwell-equations to add the spatio-temporal dynamics of the light field inside the QD emitter. Here, we discuss the QD and WL influence on normal mode splitting as well as on the turn on dynamic of QD based lasers.