DocumentCode :
2788009
Title :
Structural dependence of optical gain and carrier losses in InGaN quantum well lasers
Author :
Hader, J. ; Moloney, J.V. ; Koch, S.W.
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.
Keywords :
Absorption; Electron optics; Nonlinear optics; Optical losses; Optical microscopy; Optical scattering; Photonic band gap; Quantum well lasers; Spontaneous emission; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/QELS.2007.4431372
Filename :
4431372
Link To Document :
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