DocumentCode
2788021
Title
Development of a diamond treated photoconductive semiconductor switch for use in Blumlein pulsers
Author
Davanloo, F. ; Iosif, M.C. ; Camase, D.T. ; Collins, C.B. ; Agee, F.J.
Author_Institution
Center for Quantum Electron., Texas Univ., Dallas, TX, USA
fYear
2000
fDate
26-29 June 2000
Firstpage
73
Lastpage
77
Abstract
Conventional attempts to utilize photoconductive switches have focused upon nonlinear commutation of pulsers with GaAs photoconductive semiconductor switches (PCSS). However, a persistent problem in switch lifetime has limited the wide use of the switch in high power applications. Filamentation of the conductivity associated with high gain GaAs switches produces such high current density that the switches are damaged near the metal-semiconductor interface and the lifetime is severely limited. The authors´ current efforts have been directed to study and implement the broadening of the current channels in the avalanche photoconductive switch in order to improve lifetime and increase switching peak power. In this report, they study the use of amorphic diamond films as photoconductive switch coatings to enhance the longevity and operation. Semiconductor properties of amorphic diamond relevant to high and low power switch applications are discussed.
Keywords
commutation; current density; diamond; photoconducting switches; power semiconductor switches; pulse generators; pulsed power supplies; pulsed power switches; Blumlein pulsers; GaAs switches; amorphic diamond films; avalanche photoconductive switch; current density; diamond treated photoconductive semiconductor switch; photoconductive switch coatings; pulsed power switches; switch lifetime; switching peak power; Anodes; Bonding; Cathodes; Coatings; Gallium arsenide; Optical pulses; Photoconducting devices; Photoconductivity; Photonic band gap; Power semiconductor switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 2000. Conference Record of the 2000 Twenty-Fourth International
Conference_Location
Norfolk, VA, USA
ISSN
1076-8467
Print_ISBN
0-7803-5826-0
Type
conf
DOI
10.1109/MODSYM.2000.896168
Filename
896168
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