• DocumentCode
    2788186
  • Title

    Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers

  • Author

    Shterengas, L. ; Donetsky, D. ; Kisin, M. ; Belenky, G.

  • Author_Institution
    State University of New York at Stony Brook, 11794 USA
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.
  • Keywords
    Charge carrier lifetime; Diode lasers; Gas lasers; Laser excitation; Optical waveguides; Power lasers; Quantum well lasers; Radiative recombination; Semiconductor lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431382
  • Filename
    4431382
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2788186