Title :
Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers
Author :
Shterengas, L. ; Donetsky, D. ; Kisin, M. ; Belenky, G.
Author_Institution :
State University of New York at Stony Brook, 11794 USA
Abstract :
Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.
Keywords :
Charge carrier lifetime; Diode lasers; Gas lasers; Laser excitation; Optical waveguides; Power lasers; Quantum well lasers; Radiative recombination; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431382
