DocumentCode :
278827
Title :
Highly efficient class E amplifiers
Author :
Everard, J.K.A. ; Wilkinson, A.J.
Author_Institution :
King´´s Coll., London, UK
fYear :
1991
fDate :
33588
Firstpage :
42430
Lastpage :
42433
Abstract :
Modern portable telephones are required to operate for long periods from a small battery pack. This paper reviews previous work and describes a high efficiency (72%) 0.5 watt distributed Class E power amplifier operating at 1 GHz. Class E amplifiers are a type of switching amplifier where the losses normally associated with the `shorting out´ of the device shunt capacitance are negated by designing the load network to define the voltage across the switching device when it is off. These amplifiers unlike class C amplifiers offer the potential of 100% efficiency with a specified output power. To obtain minimum losses the voltage across the switch, when it is off, is arranged to ring and fall back to zero just before the switch turns on again. The design criteria for the voltage are: the voltage rises slowly at switch off; the voltage falls to zero by the end of the half-cycle; and the voltage has a zero rate of change at the end of the half cycle. A typical circuit is shown and it consists of a bias choke, a (transistor) switch, a shunt capacitor which incorporates the parasitic capacitance of the device, a series tuned LCR resonant circuit with an extra series reactance (inductance) which sets the load angle to obtain correct collector voltage waveform
Keywords :
microwave amplifiers; power amplifiers; solid-state microwave circuits; switched networks; 0.5 W; 1 GHz; 72 percent; bias choke; collector voltage waveform; design criteria; distributed Class E power amplifier; parasitic capacitance; portable telephones; series tuned LCR resonant circuit; shunt capacitor; switching amplifier;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Solid-State Power Amplifiers, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
182341
Link To Document :
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