Title :
Circuit techniques for efficient linear GaAs MMICs
Author :
Haigh, D.G. ; Smedley, S.A. ; Khanifar, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
Abstract :
Discusses the development of novel circuits for monolithic microwave integrated circuit (MMIC) technology using GaAs MESFETs, which promise the potential of high efficiency and linearity. These circuits are considered particularly important for the development of the new generation of MMIC communication circuits now emerging. The synthesis is based initially on a very simple square-law characterisation of the GaAs depletion-mode MESFET. Nonideal MESFET characteristics are included in simulations. The design of a 0.5 GHz-5 GHz GaAs MMIC isolator is used to illustrate the ideas presented. The synthesis presented is a special case of the more general method for transconductance/multiplier functions
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; linear integrated circuits; linear network synthesis; 0.5 to 5 GHz; GaAs; MMIC communication circuits; MMIC isolator; depletion-mode MESFET; semiconductors; square-law characterisation;
Conference_Titel :
Solid-State Power Amplifiers, IEE Colloquium on
Conference_Location :
London
